Investigation of photoelectrical properties of α-Si3N4 nanobelts with surface modifications using first-principles calculations
Author:
Affiliation:
1. School of Material Science and Engineering
2. Harbin Institute of Technology at Weihai
3. Weihai 264209
4. China
Abstract
The photoelectrical properties of α-Si3N4 nanobelts with surface H, F and Cl modifications are investigated using first-principles methods.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP02020H
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