Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS-Reference-Cited by-同舟云学术

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Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS

Published:2016 Issue:33 Volume:18 Page:23264-23276
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Eljarrat Alberto¹²³⁴⁵^ORCID,López-Conesa Lluís¹²³⁴⁵,Magén César⁶⁷⁸⁹¹⁰,García-Lepetit Noemí¹¹¹²¹³¹⁴¹⁵,Gačević Žarko¹¹¹²¹³¹⁴¹⁵,Calleja Enrique¹¹¹²¹³¹⁴¹⁵,Peiró Francesca¹²³⁴⁵,Estradé Sònia¹²³⁴⁵

Affiliation:

1. LENS-MIND-IN2UB

2. Laboratory of Electron NanoScopies

3. Departament d'Electrónica

4. Universitat de Barcelona

5. Barcelona

6. LMA-INA Laboratorio de Microscopías Avanzadas

7. Instituto de Nanociencia de Aragón – ARAID

8. Departamento de Física de la Materia Condensada

9. Universidad de Zaragoza

10. 50018 Zaragoza

11. ISOM

12. Instituto de Sistemas Optoelectrónicos y Microtecnología

13. Universidad Politécnica de Madrid

14. Madrid

15. Spain

Abstract

We present a detailed examination of a multiple In_xGa_1−xN quantum well (QW) structure for optoelectronic applications.

Funder

Ministerio de Economía y Competitividad

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP04493J

Reference51 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Solid phase immiscibility in GaInN

4. Atomic Scale Indium Distribution in aGaN/In0.43Ga0.57N/Al0.1Ga0.9NQuantum Well Structure

5. Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy

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1. Phase analysis of hydrogen contained Zr-2.5wt%Nb CANDU pressure tube using plasmon energy loss analysis;Journal of Nuclear Materials;2021-08

2. Multiple InGaN QW heterostructure;Advances in Imaging and Electron Physics;2019

3. Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect;Applied Physics Letters;2018-02-19

4. Correlation between the structural change and the electrical transport properties of indium nitride under high pressure;Phys. Chem. Chem. Phys.;2017

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