The effect of thermal annealing on the optical and electrical properties of ZnO epitaxial films grown on n-GaAs (001)-Reference-Cited by-同舟云学术

The effect of thermal annealing on the optical and electrical properties of ZnO epitaxial films grown on n-GaAs (001)

Published:2015 Issue:16 Volume:5 Page:12358-12364
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Wei-Rein¹²³⁴,Lin Bi-Hsuan¹²³⁴,Lin Chi-Yuan⁵⁶⁷⁴,Yang Song¹²³⁴,Kuo Chin-Chia⁵⁶⁷⁴,Shih-Sen Chien Forest⁸⁹¹⁰⁴,Chang Chen-Shiung⁵⁶⁷⁴,Hsu Chia-Hung¹²³⁴⁵,Hsieh Wen-Feng⁵⁶⁷⁴

Affiliation:

1. Division of Scientific Research

2. National Synchrotron Radiation Research Center

3. Hsinchu 30076

4. Taiwan

5. Department of Photonics and Institute of Electro-Optical Engineering

6. National Chiao Tung University

7. Hsinchu 30010

8. Department of Physics

9. Tunghai University

10. Taichung 40704

Abstract

The local electrostatic force F_ωvs. V_sample curves recorded at points marked on the KFM image depicted in the inset shown in the upper right corner, and the schematic band diagrams of the (a) n-type and (b) annealed p-type ZnO layer.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA13771J

Reference39 articles.

1. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO

2. Residual Native Shallow Donor in ZnO

3. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

4. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

5. Synthesis of p-type ZnO films

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