Tunable asymmetric magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 lateral spin valve

Author:

Zeng Xiangyu12,Ye Ge3,Yang Fazhi4,Ye Qikai5,Zhang Liang6,Ma Boyang5,Liu Yulu5,Xie Mengwei3,Liu Yan12,Wang Xiaozhi5ORCID,Hao Yue12,Han Genquan12

Affiliation:

1. Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China

2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

3. Center for correlated matter and Department of Physics, Zhejiang University, Hangzhou, 310027, China

4. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

5. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China

6. Research Center for Humanoid Sensing and Perception, Zhejiang Lab, Hangzhou, 311100, China

Abstract

A performance tunable asymmetry magnetoresistance behavior is achieved in a two-dimensional spin valve, which proposes an effective method for the regulation of spintronic properties and the corresponding applications.

Funder

Primary Research and Development Plan of Zhejiang Province

Zhejiang University

Natural Science Foundation of Zhejiang Province

National Key Research and Development Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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