Magnetic-field-dependent spin properties of divacancy defects in silicon carbide-Reference-Cited by-同舟云学术

Magnetic-field-dependent spin properties of divacancy defects in silicon carbide

Published:2023 Issue:11 Volume:15 Page:5300-5304
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yan Fei-Fei¹²,Wang Jun-Feng¹³²,He Zhen-Xuan¹²,Li Qiang¹²^ORCID,Lin Wu-Xi¹²,Zhou Ji-Yang¹²,Xu Jin-Shi¹²⁴^ORCID,Li Chuan-Feng¹²⁴^ORCID,Guo Guang-Can¹²⁴

Affiliation:

1. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China

2. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

3. College of Physics, Sichuan University, Chengdu, Sichuan 610065, China

4. Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China

Abstract

We investigate the optically detected magnetic resonance (ODMR) spectra and coherence times of divacancy spins in silicon carbide with a magnetic field orientation. Both the ODMR contrast and coherence time decrease with the magnetic field angle.

Funder

Fundamental Research Funds for the Central Universities

China Postdoctoral Science Foundation

Sichuan University

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR06624F

Reference47 articles.

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