Indium doping-assisted monolayer Ga2O3 exfoliation for performance-enhanced MOSFETs

Author:

Li Penghui1,Dong Linpeng12ORCID,Li Chong3,Lu Bin4,Yang Chen1ORCID,Peng Bo5,Wang Wei1,Miao Yuanhao26,Liu Weiguo1

Affiliation:

1. Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an, 710032, China

2. Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong, 510535, China

3. Xi'an Xiangteng Microelectronics Technology Co., Ltd, Xi'an, 710075, China

4. School of Physics and Information Engineering, Shanxi Normal University, Linfen, 041004, China

5. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China

6. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

Abstract

A more efficient solution to obtain ML Ga2O3 by exfoliation from indium-doped bulk β-Ga2O3. Investigated exfoliation energy, stability, band structure, and carrier mobility, and the transport properties of In-doped ML Ga2O3 MOSFETs are simulated.

Funder

National Natural Science Foundation of China

Key Research and Development Projects of Shaanxi Province

Natural Science Basic Research Program of Shaanxi Province

Natural Science Foundation of Shaanxi Provincial Department of Education

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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