Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide-Reference-Cited by-同舟云学术

Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

Published:2016 Issue:46 Volume:4 Page:10935-10944
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sanctis Shawn¹²³⁴⁵,Hoffmann Rudolf C.¹²³⁴⁵,Precht Ruben⁶⁴⁵⁷^ORCID,Anwand Wolfgang⁸⁹¹⁰⁷,Schneider Jörg J.¹²³⁴⁵^ORCID

Affiliation:

1. Fachbereich Chemie

2. Eduard-Zintl-Institut

3. Fachgebiet Anorganische Chemie

4. Technische Universität Darmstadt

5. Darmstadt

6. Fachgebiet Oberflächenforschung

7. Germany

8. Institut für Ionenstrahlphysik und Materialforschung

9. Helmholtz-Zentrum Dresden-Rossendorf

10. 01328 Dresden

Abstract

Photoelectron emission spectroscopy and positron annihilation spectroscopy allow a comprehensive interpretation of the performance of IZO-based TFTs.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03915D

Reference39 articles.

1. Recent developments in the field of transparent conductive oxide films for spectral selective coatings, electronics and photovoltaics

2. An amorphous oxide semiconductor thin-film transistor route to oxide electronics

3. Metal oxides for optoelectronic applications

4. Review of solution-processed oxide thin-film transistors

5. Solution processing of transparent conductors: from flask to film

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