Prediction of new thermodynamically stable ZnN2O3 at high pressure-Reference-Cited by-同舟云学术

Prediction of new thermodynamically stable ZnN2O3 at high pressure

Published:2020 Issue:19 Volume:22 Page:10941-10948
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Ma Chunhong¹²³⁴,Lin Jianyan⁵⁶⁷⁴^ORCID,Yang Guochun¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry

2. Jilin Normal University

3. Jilin 136000

4. China

5. Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education

6. Northeast Normal University

7. Changchun 130024

Abstract

Pressure-induced stable ZnN₂O₃ ternary compound with a wide band-gap.

Funder

Natural Science Foundation of Jilin Province

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP00813C

Reference91 articles.

1. GaN/NbN epitaxial semiconductor/superconductor heterostructures

2. Luminescent Ions in Advanced Composite Materials for Multifunctional Applications

3. Stabilizing heterostructures of soft perovskite semiconductors

4. Semiconducting polymer blends that exhibit stable charge transport at high temperatures

5. Material Design of Green-Light-Emitting Semiconductors: Perovskite-Type Sulfide SrHfS3

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