Novel valleytronic and piezoelectric properties coexisting in Janus MoAZ<sub>3</sub>H (A = Si, or Ge; Z = N, P, or As) monolayers-Reference-Cited by-同舟云学术

Novel valleytronic and piezoelectric properties coexisting in Janus MoAZ₃H (A = Si, or Ge; Z = N, P, or As) monolayers

Published:2024 Issue:13 Volume:12 Page:4682-4689
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cai Xiaolin¹^ORCID,Chen Guoxing¹,Li Rui¹,Pan Zhixiang¹,Jia Yu²³^ORCID

Affiliation:

1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China

2. Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Material Science and Engineering, Henan University, Kaifeng 475004, China

3. International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China

Abstract

By first-principles calculations, we find that valleytronic and piezoelectric properties coexist in Janus MoAZ3H ML materials, providing wide applications in the fields of valleytronics and energy conversion for MoAZ3H MLs.

Funder

National Natural Science Foundation of China

Henan Polytechnic University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00188E

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