Metal-organic chemical vapour deposition (MOCVD) of compound semiconductors. Part 2.–Preparation of ZnSe epitaxial layers on (100) orientated GaAs single-crystalline substrates-Reference-Cited by-同舟云学术

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Metal-organic chemical vapour deposition (MOCVD) of compound semiconductors. Part 2.–Preparation of ZnSe epitaxial layers on (100) orientated GaAs single-crystalline substrates

Published:1987 Issue:2 Volume:83 Page:323
ISSN:0300-9599
Container-title:Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases
language:en
Short-container-title:J. Chem. Soc., Faraday Trans. 1

Author:

Fan Guanghan,Williams John O.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/1987/F1/F19878300323

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interaction Behaviour of Nanostructured In2O3 Thin Film Towards Nitric Oxide in Argon;ECS Journal of Solid State Science and Technology;2020-01-10

2. Effect of swift heavy ion (SHI) irradiation on the structural and optical properties of N implanted CVT grown ZnSe single crystals;Materials Science in Semiconductor Processing;2015-08

3. Homogeneous thermal decomposition of dimethylzinc in a metal–organic vapour phase epitaxy reactor;J. Chem. Soc., Faraday Trans.;1995

4. Synthesis of mixed copper-indium chalcogenolates. Single-source precursors for the photovoltaic materials CuInQ2 (Q = S, Se);Journal of the American Chemical Society;1993-02

5. Metal organic vapour phase epitaxy and luminescence studies of GaAs/ZnSe double heterostructures;Semiconductor Science and Technology;1991-07-01

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