Recent advances in multiferroic oxide heterostructures and devices-Reference-Cited by-同舟云学术

Recent advances in multiferroic oxide heterostructures and devices

Published:2016 Issue:2 Volume:4 Page:234-243
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yang X.¹²³⁴⁵,Zhou Z.⁶⁷⁸⁹,Nan T.¹⁰¹¹¹²⁹,Gao Y.¹⁰¹¹¹²⁹,Yang G. M.¹³¹⁴¹⁵¹⁶⁵,Liu M.¹⁷¹⁸¹⁹²⁰⁵,Sun N. X.¹⁰¹¹¹²⁹¹⁷

Affiliation:

1. Center of Microwave and Millimeter-wave Technology

2. School of Information and Electronics

3. Beijing Institute of Technology

4. Beijing 100081

5. China

6. Energy Systems Division

7. Argonne National Laboratory

8. Lemont

9. USA

10. Electrical and Computer Engineering Department

11. Northeastern University

12. Boston

13. Key Laboratory of Information Science of Electromagnetic Waves

14. Department of Communication Science and Engineering

15. Fudan University

16. Shanghai 200433

17. Electronic Materials Research Laboratory

18. Key Laboratory of the Ministry of Education & International Center for Dielectric Research

19. Xi'an Jiaotong University

20. Xi'an 710049

Abstract

The increasing demand for realizing ultra-fast, compact, and ultra-low power electronics/spintronics has propelled the creation of novel multiferroic heterostructures which enable voltage control of magnetism in an energy efficient way.

Funder

W.M. Keck Foundation

National Science Foundation

Beijing Institute of Technology

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03008K

Reference164 articles.

1. Electric-field control of spin waves at room temperature in multiferroic BiFeO3

2. Electric field effect in correlated oxide systems

3. Multiferroic and magnetoelectric materials

4. Towards a magnetoelectric memory

5. Electrically driven phase transition in magnetite nanostructures

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