Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)-Reference-Cited by-同舟云学术

Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)

Published:2023 Issue:43 Volume:13 Page:29819-29829
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Rivera-Tello César D.¹^ORCID,Guerrero J. A.¹,Huerta L.²,Flores-Ruiz Francisco J.³,Flores M.⁴,Quiñones-Galván J. G.⁵

Affiliation:

1. Departamento de Ingeniería Mecánica Eléctrica, CUCEI, Universidad de Guadalajara, Blvd. Marcelino García Barragán 1421, Olímpica, Guadalajara, Jalisco C.P. 44430, Mexico

2. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A. P. 70-360, 04510 Ciudad de México, Mexico

3. CONAHCYT–Instituto de Física, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, Edif. IF-1, Puebla 72570, México

4. Departamento de Ingeniería de Proyectos, Universidad de Guadalajara, 45150 Zapopan, Jalisco, Mexico

5. Departamento de Física, CUCEI, Universidad de Guadalajara, Blvd. Marcelino García Barragán 1421, Olímpica, Guadalajara, Jalisco C.P. 44430, Mexico

Abstract

Schematic and idealized illustration of the hexagonal structures of the borophene sheets of the multilayered borophene films; (a) B01, (b) B02, (c) B03, and (d) B04 sample.

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA04601J

Reference45 articles.

1. Black phosphorus field-effect transistors

2. Ultrahigh electron mobility in suspended graphene

3. Borophene: New Sensation in Flatland

4. Recent progress on borophene: Growth and structures

5. Advances in ultrathin borophene materials

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