Effect of laser energy on the crystal structure and UV response characteristics of mixed-phase MgZnO thin films deposited by PLD and the fabrication of high signal/noise ratio solar-blind UV detector based on mix-phase MgZnO at lower voltage-Reference-Cited by-同舟云学术

Effect of laser energy on the crystal structure and UV response characteristics of mixed-phase MgZnO thin films deposited by PLD and the fabrication of high signal/noise ratio solar-blind UV detector based on mix-phase MgZnO at lower voltage

Published:2017 Issue:44 Volume:5 Page:11472-11480
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han S.¹²³⁴⁵,Ji X. H.¹²³⁴⁵,An Q. L.¹²³⁴⁵,Lu Y. M.¹²³⁴⁵^ORCID,Cao P. J.¹²³⁴⁵,Liu W. J.¹²³⁴⁵,Zeng Y. X.¹²³⁴⁵,Jia F.¹²³⁴⁵,Liu X. K.¹²³⁴⁵,Zhu D. L.¹²³⁴⁵

Affiliation:

1. College of Materials Science and Engineering

2. Shenzhen University

3. Shenzhen 518060

4. China

5. Shenzhen Key Laboratory of Special Functional Materials

Abstract

UV detectors based on mixed-phase MgZnO thin films, synthesized at 24 J cm⁻² and 26 J cm⁻², could detect faint deep UV light under strong background noise.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02195J

Reference45 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Transparent Electronics

3. Wide-bandgap semiconductor ultraviolet photodetectors

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