GeSe photovoltaics: doping, interfacial layer and devices-Reference-Cited by-同舟云学术

GeSe photovoltaics: doping, interfacial layer and devices

Published:2022 Issue: Volume:239 Page:250-262
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Smiles Matthew J.¹^ORCID,Shalvey Thomas P.¹,Thomas Luke¹,Hobson Theodore D. C.¹^ORCID,Jones Leanne A. H.¹^ORCID,Phillips Laurie J.¹,Don Christopher¹,Beesley Thomas¹,Thakur Pardeep K.²,Lee Tien-Lin²,Durose Ken¹,Major Jonathan D.¹,Veal Tim D.¹

Affiliation:

1. Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool, L69 7ZF, UK

2. Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK

Abstract

Ag-doped GeSe has been successfully grown and compared to undoped GeSe with XRD, photoemissions, ICP-OES and CV. The undoped and Ag-doped GeSe were included in PV devices with the champion device structure and J–V curve shown.

Funder

Diamond Light Source

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/FD/D2FD00048B

Reference34 articles.

1. GeSe: Optical Spectroscopy and Theoretical Study of a van der Waals Solar Absorber

2. Ge 4s2 lone pairs and band alignments in GeS and GeSe for photovoltaics