Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S<sub>2</sub> solar cells-Reference-Cited by-同舟云学术

Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S₂ solar cells

Published:2022 Issue: Volume:239 Page:328-338
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Sood Mohit¹^ORCID,Adeleye Damilola¹,Shukla Sudhanshu¹,Törndahl Tobias²^ORCID,Hultqvist Adam²,Siebentritt Susanne¹^ORCID

Affiliation:

1. Laboratory for Photovoltaics, Department of Physics and Materials Science, University of Luxembourg, Belvaux, L-4422, Luxembourg

2. Solar Cell Technology, Department of Materials Science and Engineering, Uppsala University, Uppsala, 751 21, Sweden

Abstract

Results show a low temperature atomic layer deposited (Zn,Sn)O buffer layer with optimum band alignment improves the translation of qFLs into VOC and consequently reduces the deficit between the qFLs and VOC of a Cu(In,Ga)S2 solar cell.

Funder

Fonds National de la Recherche Luxembourg

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/FD/D2FD00046F

Reference29 articles.

1. Predicted Power Output of Silicon-Based Bifacial Tandem Photovoltaic Systems

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3. Electrical Properties, Optical Properties, and Band Structure of CuGaS2and CuInS2

4. New World-Record Efficiency for Pure-Sulfide Cu(In,Ga)S2Thin-Film Solar Cell With Cd-Free Buffer Layer via KCN-Free Process

5. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

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