Very fast hot carrier diffusion in unconstrained MoS2on a glass substrate: discovered by picosecond ET-Raman-Reference-Cited by-同舟云学术

Very fast hot carrier diffusion in unconstrained MoS2on a glass substrate: discovered by picosecond ET-Raman

Published:2018 Issue:23 Volume:8 Page:12767-12778
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yuan Pengyu¹²³⁴^ORCID,Tan Hong⁵⁶⁷⁸^ORCID,Wang Ridong¹²³⁴^ORCID,Wang Tianyu¹²³⁴^ORCID,Wang Xinwei¹²³⁴^ORCID

Affiliation:

1. Department of Mechanical Engineering

2. Iowa State University

3. Ames

4. USA

5. School of Energy and Power Engineering

6. Nanjing University of Science and Technology

7. Nanjing

8. China

Abstract

Very high nonmonotonic thickness-dependent hot carrier diffusivity of MoS₂in a normal-κdielectric screening environment was discovered by ET-Raman technique.

Funder

National Science Foundation

U.S. Department of Energy

Iowa Energy Center

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA01106K

Reference72 articles.

1. Van der Waals heterostructures

2. Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometry

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Ultrasensitive photodetectors based on monolayer MoS2

5. Single-layer MoS2 transistors

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