A fully printed ultrafast Si/WS<sub>2</sub> quantum dot photodetector with very high responsivity over the UV to near-infrared region-Reference-Cited by-同舟云学术

A fully printed ultrafast Si/WS₂ quantum dot photodetector with very high responsivity over the UV to near-infrared region

Published:2023 Issue:33 Volume:15 Page:13809-13821
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Debnath Subhankar¹^ORCID,Ghosh Koushik¹,Meyyappan M.²^ORCID,Giri P. K.¹²^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, 781039 India

2. Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, 781039 India

Abstract

Additive manufacturing such as 2D printing is a cost-effective alternative to the conventional microdevice fabrication processes. We developed a high performance Si/WS2 quantum dot-based heterostructure photodetector by a simple printing process.

Funder

UGC-DAE Consortium for Scientific Research, University Grants Commission

Science and Engineering Research Board

Ministry of Electronics and Information technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR02331A

Reference47 articles.

1. Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes

2. Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition

3. Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed

4. Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm

5. Self-Driven Metal-Semiconductor-Metal WSe2 Photodetector with Asymmetric Contact Geometries

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