Reduction of Fermi level pinning at Cu–BP interfaces by atomic passivation-Reference-Cited by-同舟云学术

Reduction of Fermi level pinning at Cu–BP interfaces by atomic passivation

Published:2019 Issue:24 Volume:11 Page:11569-11576
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ou Pengfei¹²³⁴^ORCID,Zhou Xiao¹²³⁴⁵,Chen Cheng¹²³⁴,Meng Fanchao¹²³⁴,Chen Yiqing¹²³⁴,Song Jun¹²³⁴

Affiliation:

1. Department of Mining and Materials Engineering

2. McGill University

3. Montreal

4. Canada H3A 0C5

5. Institute of Mechanical Engineering

Abstract

Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its monolayer, attracting intense attention for its applications in field-effect transistors.

Funder

Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR10270H

Reference70 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Honeycomb Carbon: A Review of Graphene

3. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

4. Black phosphorus field-effect transistors

5. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

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