Passivation principle of deep-level defects: a study of Sn<sub>Zn</sub> defects in kesterites for high-efficient solar cells-Reference-Cited by-同舟云学术

Passivation principle of deep-level defects: a study of Sn_Zn defects in kesterites for high-efficient solar cells

Published:2022 Issue:6 Volume:10 Page:2849-2855
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhao Ke¹²,Xiang Huiwen¹,Zhu Rui¹,Liu Chengyan¹^ORCID,Jia Yu¹²^ORCID

Affiliation:

1. Key Laboratory for Special Functional Materials of Ministry of Education, The Joint Center for Theoretical Physics, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng, Henan 475001, China

2. International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China

Abstract

The strong molecular orbital interaction and the octet electron counting rule are realized simultaneously by the formation of 2PS + SnZn defect complex for passivating the deep-level of SnZn defect in kesterite solar cells.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TA/D1TA10042D

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