Determination of optimum optoelectronic properties in vertically stacked MoS2/h-BN/WSe2 van der Waals heterostructures-Reference-Cited by-同舟云学术

Determination of optimum optoelectronic properties in vertically stacked MoS2/h-BN/WSe2 van der Waals heterostructures

Published:2019 Issue:41 Volume:21 Page:23179-23186
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Tan Shilin¹²³⁴⁵,Zhao Yipeng¹²³⁴⁵,Dong Jiansheng¹²³⁴⁵,Yang Guowei⁶⁷⁸⁹⁵^ORCID,Ouyang Gang¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education

2. Synergetic Innovation Center for Quantum Effects and Applications (SICQEA)

3. Hunan Normal University

4. Changsha 410081

5. China

6. State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center

7. School of Physics and Engineering

8. Sun Yat-sen University

9. Guangzhou 510275

Abstract

Inserting an insulator at the interface in vdW heterostructure solar cell unit can improve the photoelectric conversion efficiency, and the insulator has an optimal thickness.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP04700J

Reference46 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Photoexcitation Dynamics in Janus-MoSSe/WSe2 Heterobilayers: Ab Initio Time-Domain Study

3. Transition-metal dichalcogenides/Mg(OH)2 van der Waals heterostructures as promising water-splitting photocatalysts: a first-principles study