Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires-Reference-Cited by-同舟云学术

Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires

Published:2021 Issue:41 Volume:13 Page:17547-17555
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Meng Andrew C.¹^ORCID,Wang Yanming²³^ORCID,Braun Michael R.¹,Lentz J. Zach¹,Peng Siying¹,Cheng Huikai⁴,Marshall Ann F.⁵,Cai Wei⁶,McIntyre Paul C.¹

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

3. University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China 200240

4. ThermoFisher Scientific, Hillsboro, OR 97124, USA

5. Stanford Nano Shared Facility, Stanford University, Stanford, CA 94305, USA

6. Department of Mechanical Engineering, Stanford University, Stanford, CA 94305, USA

Abstract

The balance between Sn precursor flux and available surfaces for GeSn nucleation and growth determines whether the nanowire bends or precipitates form. When growth is precursor flux limited, bending occurs; when growth is adatom attachment site limited, Sn precipitates form.

Funder

National Science Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR04220C

Reference22 articles.

1. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

2. Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%