Constructing abundant interfaces by decorating MoP quantum dots on CoP nanowires to induce electronic structure modulation for enhanced hydrogen evolution reaction

Author:

Chen Yuanyuan1,Sui Tingting1ORCID,Lyu Chaojie1,Wu Kaili1,Wu Jiwen1,Huang Meifang1,Hao Ju1,Lau Woon-Ming12,Wan Chubin1,Pang Dawei3,Zheng Jinlong12ORCID

Affiliation:

1. Beijing Advanced Innovation Center for Materials Genome Engineering, Center for Green Innovation, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, P. R. China

2. Shunde Innovation School, University of Science and Technology Beijing, Foshan, 528399, P. R. China

3. Beijing Key Laboratory of Solid Microstructure and Properties, Department of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, P. R. China

Abstract

In the heterostructure MoP/CoP/Cu3P/CF, the transfer of interfacial electrons from MoP to CoP helps to regulate the electronic structure of the active sites and possess suitable H adsorption free energy, resulting in significantly enhanced HER activity.

Funder

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

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