Constructing abundant interfaces by decorating MoP quantum dots on CoP nanowires to induce electronic structure modulation for enhanced hydrogen evolution reaction-Reference-Cited by-同舟云学术

Constructing abundant interfaces by decorating MoP quantum dots on CoP nanowires to induce electronic structure modulation for enhanced hydrogen evolution reaction

Published:2023 Issue:9 Volume:10 Page:3761-3772
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Chen Yuanyuan¹,Sui Tingting¹^ORCID,Lyu Chaojie¹,Wu Kaili¹,Wu Jiwen¹,Huang Meifang¹,Hao Ju¹,Lau Woon-Ming¹²,Wan Chubin¹,Pang Dawei³,Zheng Jinlong¹²^ORCID

Affiliation:

1. Beijing Advanced Innovation Center for Materials Genome Engineering, Center for Green Innovation, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, P. R. China

2. Shunde Innovation School, University of Science and Technology Beijing, Foshan, 528399, P. R. China

3. Beijing Key Laboratory of Solid Microstructure and Properties, Department of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, P. R. China

Abstract

In the heterostructure MoP/CoP/Cu3P/CF, the transfer of interfacial electrons from MoP to CoP helps to regulate the electronic structure of the active sites and possess suitable H adsorption free energy, resulting in significantly enhanced HER activity.

Funder

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D3MH00644A

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1. Unveiling the role of counter-anions in amorphous transition metal-based oxygen evolution electrocatalysts