Investigating versatile capabilities of organic field-effect transistors incorporated with vacuum-deposited metal nanoparticles-Reference-Cited by-同舟云学术

Investigating versatile capabilities of organic field-effect transistors incorporated with vacuum-deposited metal nanoparticles

Published:2024 Issue:16 Volume:12 Page:5941-5950
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Ji Hwan¹²^ORCID,Jo Il-Young¹,Baek Seokhyeon³^ORCID,Cho Hong-rae⁴,Park Sungjun³⁵^ORCID,Lee Jongwon¹,Kim Chang-Hyun⁶^ORCID,Yoon Myung-Han¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea

2. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea

3. Department of Intelligence Semiconductor Engineering, Ajou University, Suwon 16499, Republic of Korea

4. School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea

5. Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea

6. School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada

Abstract

Optically programmable organic field-effect transistors, developed using vacuum-deposited metal nanoparticles, enhance photocarrier generation and act as charge trapping centers, modulating charge retention.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC03609J

Reference50 articles.

1. An ultra-lightweight design for imperceptible plastic electronics

2. Inkjet printed polymeric electron blocking and surface energy modifying layer for low dark current organic photodetectors

3. Efficient All-Vacuum Deposited Perovskite Solar Cells by Controlling Reagent Partial Pressure in High Vacuum

4. Solution-Processed, Low-Voltage Polycrystalline Organic Field-Effect Transistor Fabricated Using Highly Ordered Liquid Crystal With Low- Gate Dielectric

5. Benzobisthiadiazole-alt-bithiazole copolymers with deep HOMO levels for good-performance field-effect transistors with air stability and a high on/off ratio

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