Pressure-driven band gap engineering in ion-conducting semiconductor silver orthophosphate-Reference-Cited by-同舟云学术

Pressure-driven band gap engineering in ion-conducting semiconductor silver orthophosphate

Published:2019 Issue:9 Volume:7 Page:4451-4458
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Lu Yang¹²³^ORCID,Zhu Shengcai¹²³⁴⁵,Huang Eugene¹²³,He Yu¹²³⁶⁷^ORCID,Ruan Jiaji¹²³,Liu Gang¹²³,Yan Hao¹²³^ORCID

Affiliation:

1. Center for High Pressure Science & Technology Advanced Research

2. Shanghai 201203

3. China

4. Department of Physics and Astronomy

5. High Pressure Science and Engineering Center

6. Key Laboratory of High-Temperature and High-Pressure Study of the Earth's Interior

7. Institute of Geochemistry

Abstract

The obtainment of active semiconductor photocatalysts remains a challenge for converting sunlight into clean fuels. Here, a pressure technique is explored to optimize the electronic band structure of a promising photocatalyst.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TA/C8TA10606A

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