Van der Waals heterostructure of graphene and germanane: tuning the ohmic contact by electrostatic gating and mechanical strain-Reference-Cited by-同舟云学术

Van der Waals heterostructure of graphene and germanane: tuning the ohmic contact by electrostatic gating and mechanical strain

Published:2021 Issue:37 Volume:23 Page:21196-21206
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Bafekry A.¹,Karbasizadeh S.²^ORCID,Faraji M.³^ORCID,Bagheri Khatibani A.⁴^ORCID,Sarsari I. Abdolhosseini²^ORCID,Gogova D.⁵,Ghergherehchi M.⁶

Affiliation:

1. Department of Radiation Application, Shahid Beheshti University, 19839 69411 Tehran, Iran

2. Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran

3. TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey

4. Nano Research Lab, Lahijan Branch, Islamic Azad University, 1616, Lahijan, Iran

5. Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea

6. Department of Physics, Chemistry and Biology, Linkoping University, 58183, Linköping, Sweden

Abstract

The structural and electronic properties of the van der Waals GeH/Graphene heterostructure are investigated. This interface shows a n-type Ohmic. The effects of interlayer distances, strain, and electric field on the interface have been studied.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP03632G

Reference88 articles.

1. Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field

2. Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating

3. First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS 2 monolayer under applied out-plane strain

4. Bandgap opening in hydrogenated germanene

5. Half-metallic graphene nanoribbons

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