Ultrahigh sensitivity in the amorphous ZnSnO UV photodetector
Author:
Affiliation:
1. State Key Laboratory of Silicon Materials
2. Cyrus Tang Center for Sensor Materials and Applications
3. School of Materials Science and Engineering
4. Zhejiang University
5. Hangzhou 310027
Abstract
An ultraviolet photodetector based on α-ZTO exhibits ultrahigh sensitivity and good performance due to the TFTs structure.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA02924H
Reference32 articles.
1. UV-enhanced room-temperature gas sensing of ZnGa2O4 nanowires functionalized with Au catalyst nanoparticles
2. Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector
3. Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li0.15Ni0.85O and n-ZnO films for UV-detector applications
4. ZnO Nanowire UV Photodetectors with High Internal Gain
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