Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition
Author:
Affiliation:
1. School of Electronics and Computer Science
2. University of Southampton
3. Southampton
4. UK
5. School of Chemistry
6. Department of Physics
7. University of Warwick
8. Coventry CV4 7AL
9. School of Physics and Astronomy
Abstract
The design and fabrication of a 2D passive phase change memory matrix by non-aqueous electrodeposition of confined Ge–Sb–Te cells.
Funder
Engineering and Physical Sciences Research Council
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/FD/C8FD00126J
Reference31 articles.
1. Stochastic phase-change neurons
2. Phase-Change Memory—Towards a Storage-Class Memory
3. The race of phase change memories to nanoscale storage and applications
4. Structural properties of Ge2Sb2Te5 thin films by metal organic chemical vapor deposition for phase change memory applications
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