Tunable Dirac states in doped B<sub>2</sub>S<sub>3</sub> monolayers-Reference-Cited by-同舟云学术

Tunable Dirac states in doped B₂S₃ monolayers

Published:2022 Issue:17 Volume:24 Page:10095-10100
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Li Xiaoteng¹^ORCID,Zuo Xi²,Cui Bin³^ORCID,Zhao Wenkai¹^ORCID,Xu Yuqing¹^ORCID,Zou Dongqing¹^ORCID,Yang Chuanlu¹

Affiliation:

1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264000, People's Republic of China

2. College of Physics and Electronic Science, Hubei Normal University, Huangshi 435002, China

3. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China

Abstract

The Dirac cone of the Sn-doped B2S3 monolayer is just located on the EF, and the typical kagome bands arise. When the SOC is considered, the Dirac cone on the K point is opened, leading to a direct band-gap of about 90 meV.

Funder

National Natural Science Foundation of China

Taishan Scholar Project of Shandong Province

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP05693J

Reference35 articles.

1. Topological semimetals

2. Dirac materials

3. Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene

4. Graphene: An Emerging Electronic Material

5. Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices

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