Role of processing parameters in CVD grown crystalline monolayer MoSe<sub>2</sub>-Reference-Cited by-同舟云学术

Role of processing parameters in CVD grown crystalline monolayer MoSe₂

Published:2022 Issue:21 Volume:12 Page:13428-13439
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Papanai Girija Shankar¹²,Sahoo Krishna Rani³,Reshma G Betsy²⁴,Gupta Sarika⁵,Gupta Bipin Kumar¹²^ORCID

Affiliation:

1. Photonic Materials Metrology Sub Division, Advanced Materials and Device Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India

2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India

3. Tata Institute of Fundamental Research – Hyderabad, Sy. No. 36/P Serilingampally, Mandal, Gopanpally Village, Hyderabad 500046, India

4. CSIR-Institute of Genomics and Integrative Biology, Mathura Road, New Delhi 110025, India

5. Molecular Sciences Lab, National Institute of Immunology, Aruna Asaf Ali Marg, New Delhi 110067, India

Abstract

Monolayer MoSe2 flakes with varying shapes, including sharp triangle, truncated triangle, hexagon, and rough edge circle are synthesized using APCVD method. The lattice and quasiparticle dynamics are examined under different growth conditions.

Funder

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA00387B

Reference42 articles.

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4. Direct‐Writing of 2D Diodes by Focused Ion Beams

5. Design Rules for High Performance Tunnel Transistors From 2-D Materials

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