Defect formation in In2O3 and SnO2: a new atomistic approach based on accurate lattice energies-Reference-Cited by-同舟云学术

Defect formation in In2O3 and SnO2: a new atomistic approach based on accurate lattice energies

Published:2018 Issue:45 Volume:6 Page:12386-12395
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hou Qing¹²³⁴⁵^ORCID,Buckeridge John¹²³⁴⁵^ORCID,Lazauskas Tomas¹²³⁴⁵^ORCID,Mora-Fonz David⁶³⁷⁵^ORCID,Sokol Alexey A.¹²³⁴⁵^ORCID,Woodley Scott M.¹²³⁴⁵^ORCID,Catlow C. Richard A.¹²³⁴⁵

Affiliation:

1. Kathleen Lonsdale Materials Chemistry

2. Department of Chemistry

3. University College London

4. London WC1H 0AJ

5. UK

6. Department of Physics and Astronomy

7. London WC1E 6BT

Abstract

A new consistent interatomic force field for In₂O₃ and SnO₂.

Funder

Engineering and Physical Sciences Research Council

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC04760J

Reference54 articles.

1. Applications and Processing of Transparent Conducting Oxides

2. Transparent and conducting ITO films: new developments and applications

3. Deposition of indium–tin-oxide films on polymer substrates for application in plastic-based flat panel displays

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5. On the possibility of p-type SnO2

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