A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification-Reference-Cited by-同舟云学术

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A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification

Published:2018 Issue:45 Volume:8 Page:25514-25518
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Hailing¹²³⁴⁵^ORCID,Hussain Sajjad¹²³⁴⁵,Ali Asif¹²³⁴⁵,Naqvi Bilal Abbas¹²³⁴⁵,Vikraman Dhanasekaran⁶⁷⁸⁴^ORCID,Jeong Woonyoung¹²³⁴⁵,Song Wooseok⁹¹⁰¹¹¹²^ORCID,An Ki-Seok⁹¹⁰¹¹¹²^ORCID,Jung Jongwan¹²³⁴⁵^ORCID

Affiliation:

1. Graphene Research Institute

2. Sejong University

3. Seoul 143-747

4. Republic of Korea

5. Institute of Nano and Advanced Materials Engineering

6. Division of Electronics and Electrical Engineering

7. Dongguk University-Seoul

8. Seoul 04620

9. Thin Film Materials Research Center

10. Korea Research Institute of Chemical Technology

11. Daejon 305-600

12. Korea

Abstract

Here, we report a vertical MoSe₂/WSe₂ p–n heterostructure with rectifying I–V behavior and back-gate tunability.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA03398F

Reference28 articles.

1. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications

5. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

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