Facet-dependent electrical conductivity properties of GaN wafers-Reference-Cited by-同舟云学术

Facet-dependent electrical conductivity properties of GaN wafers

Published:2021 Issue:42 Volume:9 Page:15354-15358
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hsieh Pei-Lun¹,Kumar Gautam²^ORCID,Wang Yen-Yu³^ORCID,Lu Yu-Jung³⁴^ORCID,Chen Lih-Juann¹⁵^ORCID,Huang Michael H.²⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan

3. Department of Physics, National Taiwan University, Taipei 10617, Taiwan

4. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan

5. Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan

Abstract

A large conductivity difference exists between the {0001} and {101̄0} faces of a GaN wafer. Current-rectifying I–V curves were obtained with electrodes contacting both faces simultaneously.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC04219J

Reference30 articles.

1. Facet-Dependent Electrical Conductivity Properties of Cu2O Crystals

2. Facet-Dependent Electrical Conductivity Properties of Silver Oxide Crystals

3. Facet-Dependent Electrical Conductivity Properties of PbS Nanocrystals

4. Facet-Dependent and Adjacent Facet-Related Electrical Conductivity Properties of SrTiO3 Crystals

5. A selectively exposed crystal facet-engineered TiO2 thin film photoanode for the higher performance of the photoelectrochemical water splitting reaction

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