A tunable band gap of the layered semiconductor Zn3In2S6 under pressure-Reference-Cited by-同舟云学术

A tunable band gap of the layered semiconductor Zn3In2S6 under pressure

Published:2022 Issue:5 Volume:10 Page:1825-1832
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Susilo Resta A.¹^ORCID,Liu Yu²^ORCID,Sheng Hongwei¹,Dong Hongliang¹,Sereika Raimundas³^ORCID,Kim Bongjae⁴^ORCID,Hu Zhixiang²,Li Shujia¹,Yuan Mingzhi¹,Petrovic Cedomir²^ORCID,Chen Bin¹

Affiliation:

1. Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China

2. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA

3. Vytautas Magnus University, K. Donelaičio Str. 58, Kaunas 44248, Lithuania

4. Department of Physics, Kunsan National University, Gunsan 54150, Korea

Abstract

A highly tunable band gap of the layered semiconductor Zn3In2S6 under pressure is reported. The change in the band gap is strongly coupled to the variation and transformation of the crystal structure.

Funder

National Natural Science Foundation of China

National Research Foundation of Korea

Korea Institute of Science and Technology Information

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05098B

Reference50 articles.

1. Electric Field Effect in Atomically Thin Carbon Films