Gapped metals as thermoelectric materials revealed by high-throughput screening-Reference-Cited by-同舟云学术

Gapped metals as thermoelectric materials revealed by high-throughput screening

Published:2020 Issue:34 Volume:8 Page:17579-17594
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Ricci Francesco¹²³⁴^ORCID,Dunn Alexander⁵⁶⁷⁸⁹^ORCID,Jain Anubhav⁵⁶⁷,Rignanese Gian-Marco¹²³⁴^ORCID,Hautier Geoffroy¹²³⁴^ORCID

Affiliation:

1. Institute of Condensed Matter and Nanosciences (IMCN)

2. Université Catholique de Louvain

3. B-1348 Louvain-la-Neuve

4. Belgium

5. Lawrence Berkeley National Laboratory

6. Energy Technologies Area

7. USA

8. Department of Materials Science and Engineering

9. UC Berkeley

Abstract

Gapped metals present in their band structure a gap near the Fermi level. This key feature makes these metals comparable to degenerate semiconductors and thus suitable as thermoelectrics. The present screening searches them systematically.

Funder

Fonds De La Recherche Scientifique - FNRS

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TA/D0TA05197G

Reference106 articles.

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