InSe: a two-dimensional material with strong interlayer coupling-Reference-Cited by-同舟云学术

InSe: a two-dimensional material with strong interlayer coupling

Published:2018 Issue:17 Volume:10 Page:7991-7998
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sun Yuanhui¹²³⁴,Luo Shulin¹²³⁴,Zhao Xin-Gang¹²³⁴,Biswas Koushik⁵⁶⁷^ORCID,Li Song-Lin⁸⁹¹⁰¹¹⁴,Zhang Lijun¹²³⁴¹²^ORCID

Affiliation:

1. Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering

2. Jilin University

3. Changchun 130012

4. China

5. Department of Chemistry and Physics

6. Arkansas State University

7. USA

8. National Laboratory of Solid State Microstructures

9. School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures

10. Nanjing University

11. Nanjing 210023

12. State Key Laboratory of Superhard Materials

Abstract

Interlayer coupling in atomically thin, two-dimensional indium selenide (InSe) may have a significant impact on its properties, including large tunability in the band gap, height of band-edge state, phonon frequency, and high carrier mobility.

Funder

National Natural Science Foundation of China

U.S. Department of Homeland Security

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR09486H

Reference91 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. The structure of suspended graphene sheets

4. Ab initio optical properties of BN in the cubic and in the layered hexagonal phase

5. Growth of single crystals of hexagonal boron nitride

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