Detrapping of the carriers from shallow states in a highly responsive, fast, broadband (UV-vis-NIR), self-powered SnSe/Si photodetector with asymmetric metal electrodes-Reference-Cited by-同舟云学术

Detrapping of the carriers from shallow states in a highly responsive, fast, broadband (UV-vis-NIR), self-powered SnSe/Si photodetector with asymmetric metal electrodes

Published:2024 Issue:8 Volume:5 Page:3220-3227
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Kumar Manoj¹²³^ORCID,Rani Sanju⁴,Gour Kuldeep Singh⁵^ORCID,Kumar Kapil¹⁶,Yadav Reena¹⁶,Husale Sudhir¹⁶^ORCID,Kumar Mahesh¹⁶,Singh Vidya Nand¹²^ORCID

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh 201002, India

2. Indian Reference Materials (BND) Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India

3. Department of Physical Science, Indian Institute of Technology Mandi, Kamand, Himachal Pradesh 175075, India

4. Department of Electrical Engineering, Indian Institute of Technology Mandi, Kamand, Himachal Pradesh 175075, India

5. Surface Engineering Group, Advanced Materials & Processes Division, CSIR-National Metallurgical Laboratory, Burma Mines, Jamshedpur, Jharkhand 831007, India

6. Indian Standard Time Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India

Abstract

Bias-dependent trapping and de-trapping can be seen in the SnSe device. At low bias, voltage trapping of the carriers can be seen in the device; they start to de-trap after 500 mV bias.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MA/D3MA01127E

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