Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories-Reference-Cited by-同舟云学术

Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories

Published:2018 Issue:13 Volume:6 Page:3387-3394
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Chao¹²³⁴⁵,Hu Chaoquan¹²³⁴⁵^ORCID,Wang Jianbo⁶⁷⁸⁹,Yu Xiao¹²³⁴⁵,Yang Zhongbo¹²³⁴⁵,Liu Jian¹²³⁴⁵,Li Yuankai¹²³⁴⁵,Bi Chaobin¹²³⁴⁵,Zhou Xilin¹⁰¹¹¹²,Zheng Weitao¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Superhard Materials

2. Key Laboratory of Automobile Materials of MOE

3. School of Materials Science and Engineering

4. Jilin University

5. Changchun 130012

6. School of Science

7. Changchun University of Science and Technology

8. Changchun 130022

9. China

10. Max Planck Institute of Microstructure Physics

11. Halle (Saale)

12. Germany

Abstract

There is an increasing demand for high-density memories with high stability for supercomputers in this big data era.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC00222C

Reference66 articles.

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2. Genetics: Big hopes for big data

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4. A map for phase-change materials

5. Resonant bonding in crystalline phase-change materials

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