Electronic transitions and vibrational properties of bulk and monolayer g-C3N4, and a g-C3N4/MoS2 heterostructure from a DFT study-Reference-Cited by-同舟云学术

Electronic transitions and vibrational properties of bulk and monolayer g-C₃N₄, and a g-C₃N₄/MoS₂ heterostructure from a DFT study

Published:2024 Issue:35 Volume:26 Page:23023-23031
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Oreshonkov A. S.¹²³^ORCID,Sukhanova E. V.¹^ORCID,Pankin D. V.⁴,Popov Z. I.¹^ORCID

Affiliation:

1. Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow, 119334, Russia

2. Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia

3. School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia

4. Center for Optical and Laser Materials Research, Saint-Petersburg State University, Saint-Petersburg, 199034, Russia

Abstract

The study examines the stability and properties of g-C3N4 and g-C3N4/MoS2 heterostructure revealing an indirect-to-direct band gap transition and Raman spectra evolution due to dimensionally reduction and heterostructure formation.

Funder

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP02289K

Reference49 articles.

1. Synaptic devices based neuromorphic computing applications in artificial intelligence

2. The g-C3N4-TiO2 nanocomposite for non-volatile memory and artificial synaptic device applications

3. Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?

4. g-C3N4-Based Heterostructured Photocatalysts

5. Designing Efficient MoS 2 /g‐C 3 N 4 Hybrid Photocatalysts by Regulating the Interlayer Spacing of MoS 2