On the factors affecting the response time of synaptic ion-gated transistors-Reference-Cited by-同舟云学术

On the factors affecting the response time of synaptic ion-gated transistors

Published:2023 Issue:24 Volume:11 Page:8293-8299
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Karimi Azari Ramin¹^ORCID,Lan Tian¹,Santato Clara¹^ORCID

Affiliation:

1. Engineering Physics, Polytechnique Montreal, 2500 Ch. Polytechnique, H3T 1J4, Montreal, QC, Canada

Abstract

Response time and plasticity of P3HT-IGTs can be controlled by engineering input stimuli. IGTs can be employed as neuromorphic devices integrating memory (LTP) and processing functions (STP) in the same device, as a function of biasing conditions.

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00161J

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