Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors-Reference-Cited by-同舟云学术

Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors

Published:2023 Issue:10 Volume:52 Page:3072-3084
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Alderhami Suliman A.¹²,Ahumada-Lazo Ruben³⁴^ORCID,Buckingham Mark A.⁵^ORCID,Binks David J.³^ORCID,O'Brien Paul¹⁵,Collison David¹,Lewis David J.⁵^ORCID

Affiliation:

1. Department of Chemistry, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK

2. Department of Chemistry, Faculty of Science and Arts, Al-Baha University, Al Makhwah, Saudi Arabia

3. Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK

4. Tecnologico de Monterrey, School of Engineering and Sciences, Ave. Eugenio Garza Sada 2501, Monterrey, N.L., Mexico, 64849

5. Department of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK

Abstract

A low temperature and facile molecular precursor route towards phase-pure Ga- and In-doped CdS is reported. Photoluminescence spectroscopy showed that charge carrier recombination was reduced by doping the material, increasing exciton lifetime.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/DT/D3DT00239J

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