Dose-dependent effect of proton irradiation on electrical properties of WSe2 ambipolar field effect transistors-Reference-Cited by-同舟云学术

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Dose-dependent effect of proton irradiation on electrical properties of WSe2 ambipolar field effect transistors

Published:2019 Issue:29 Volume:11 Page:13961-13967
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Shin Jiwon¹²³⁴⁵,Cho Kyungjune¹²³⁴⁵,Kim Tae-Young¹²³⁴⁵,Pak Jinsu¹²³⁴⁵,Kim Jae-Keun¹²³⁴⁵,Lee Woocheol¹²³⁴⁵,Kim Jaeyoung¹²³⁴⁵,Chung Seungjun⁶⁷⁸⁵^ORCID,Hong Woong-Ki⁹¹⁰¹¹⁵^ORCID,Lee Takhee¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics and Astronomy

2. and Institute of Applied Physics

3. Seoul National University

4. Seoul 08826

5. Korea

6. Photo-Electronic Hybrids Research Center

7. Korea Institute of Science and Technology

8. Seoul 02792

9. Jeonju Center

10. Korea Basic Science Institute

11. Jeonju

Abstract

We investigated the effect of proton beam irradiation on WSe₂ ambipolar field effect transistors with various beam dose conditions.

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR03345A

Reference51 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Physical and chemical tuning of two-dimensional transition metal dichalcogenides

3. Single-layer MoS2 transistors

4. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

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