Complementary bonding analysis of the N–Si interaction in pentacoordinated silicon compounds using quantum crystallography-Reference-Cited by-同舟云学术

Complementary bonding analysis of the N–Si interaction in pentacoordinated silicon compounds using quantum crystallography

Published:2019 Issue:43 Volume:48 Page:16330-16339
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Fugel Malte¹²³⁴⁵,Ponomarenko Maksym V.⁶⁷⁸⁵,Hesse Maxie F.¹²³⁴⁵,Malaspina Lorraine A.¹²³⁴⁵^ORCID,Kleemiss Florian¹²³⁴⁵^ORCID,Sugimoto Kunihisa⁹¹⁰¹¹¹²¹³^ORCID,Genoni Alessandro¹⁴¹⁵¹⁶¹⁷¹⁸^ORCID,Röschenthaler Gerd-Volker⁶⁷⁸⁵^ORCID,Grabowsky Simon¹²³⁴⁵^ORCID

Affiliation:

1. University of Bremen

2. Department 2: Biology/Chemistry

3. Institute of Inorganic Chemistry and Crystallography

4. 28359 Bremen

5. Germany

6. Jacobs University

7. Life Sciences & Chemistry

8. 28759 Bremen

9. JASRI/Diffraction & Scattering Division

10. Hyogo 679-5198

11. Japan

12. Institute for Integrated Cell-Material Sciences (iCeMS)

13. Kyoto University

14. Université de Lorraine

15. CNRS

16. Laboratoire LPCT

17. 57078 Metz

18. France

Abstract

The unique combination of quantum crystallography and complementary bonding analysis is used to investigate the bonding of pentacoordinated silicon atoms.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/DT/C9DT02772F

Reference66 articles.

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2. L. H. Sommer , Stereochemistry, mechanism and silicon , McGraw-Hill , 1965

3. Nucleophilic Substitution at Silicon (SN2@Si) via a Central Reaction Barrier

4. Reactivity of penta- and hexacoordinate silicon compounds and their role as reaction intermediates

5. Pentacoordinated silicon hydrides: very high affinity of the silicon-hydrogen bond for the equatorial position

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