High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage-Reference-Cited by-同舟云学术

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High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

Published:2014 Issue:10 Volume:6 Page:5479
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Van Ngoc Huynh,Lee Jae-Hyun,Sohn Jung Inn,Cha Seung Nam,Whang Dongmok,Kim Jong Min,Kang Dae Joon

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C3NR06690H

Reference28 articles.

1. Toward Nanowire Electronics

2. Nanowire transistors without junctions

3. Nanowire transistors made easy

4. High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

5. Ge/Si nanowire heterostructures as high-performance field-effect transistors

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