Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors-Reference-Cited by-同舟云学术

Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

Published:2020 Issue:43 Volume:10 Page:25540-25546
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Cheng Fei¹²³⁴,Verrelli Emanuele⁵²³⁴,Alharthi Fahad A.¹²³⁴⁶^ORCID,Das Satyajit⁷⁸⁹¹⁰¹¹,Anthopoulos Thomas D.⁷⁸⁹¹⁰¹¹^ORCID,Lai Khue T.¹²¹³¹⁴¹⁵¹⁶,Kemp Neil T.⁵²³⁴^ORCID,O'Neill Mary¹⁷¹⁸¹⁹⁴^ORCID,Kelly Stephen M.¹²³⁴^ORCID

Affiliation:

1. Department of Chemistry & Biochemistry

2. University of Hull

3. Hull

4. UK

5. Department of Physics & Mathematics

6. Department of Chemistry

7. Centre for Plastic Electronics

8. Department of Physics

9. Blackett Laboratory

10. Imperial College London

11. London SW7 2BW

12. Electronic Systems Design Centre

13. Energy Safety Research Institute

14. College of Engineering

15. Swansea University Bay Campus

16. Swansea

17. School of Science & Technology

18. Nottingham Trent University

19. Nottingham

Abstract

A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO₂ nanorods and zinc oxide as the semiconductor, also deposited from solution.

Funder

Engineering and Physical Sciences Research Council

King Abdullah University of Science and Technology

King Saud University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA04445H

Reference27 articles.

1. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors