Current-in-plane tunneling measurement of oxygen-functionalized few-layer boron nitride lateral barriers-Reference-Cited by-同舟云学术

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Current-in-plane tunneling measurement of oxygen-functionalized few-layer boron nitride lateral barriers

Published:2024 Issue:21 Volume:12 Page:7615-7626
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Torkashvand Ziba¹²,Mirabbaszadeh Kavoos¹^ORCID,Shayeganfar Farzaneh¹³^ORCID,Srivastava Pawan Kumar²^ORCID,Lee Changgu²^ORCID,Beigtan Mohadese⁴

Affiliation:

1. Department of Physics and Energy Engineering, Amirkabir University of Technology, Tehran 15875-4413, Iran

2. School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea

3. Department of Aerospace Engineering, University of Michigan, Ann Arbor, MI 48109, USA

4. School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, South Korea

Abstract

A surface tunneling current measurement was used to study the electronic performance of hexagonal boron nitride (hBN) and surface-functionalized hBN in a variety of configurations and conditions.

Funder

Amirkabir University of Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC03527A

Reference47 articles.

1. Breakthrough in current-in-plane tunneling measurement precision by application of multi-variable fitting algorithm

2. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

3. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. Resonant tunneling diodes: models and properties

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