Photosensitive Schottky barrier diodes based on Cu/p-SnSe thin films fabricated by thermal evaporation-Reference-Cited by-同舟云学术

Photosensitive Schottky barrier diodes based on Cu/p-SnSe thin films fabricated by thermal evaporation

Published:2022 Issue:5 Volume:3 Page:2425-2433
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Jagani Hirenkumar Shantilal¹^ORCID,Gupta Shubham Umeshkumar¹^ORCID,Bhoraniya Karan¹,Navapariya Mayuri¹,Pathak Vivek M.¹,Solanki Gunvant K.¹,Patel Hetal¹

Affiliation:

1. Thin Film Device Fabrication & Characterisation Laboratory, Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat 388120, India

Abstract

The photosensitive nature of a thermally evaporated Cu/p-SnSe thin film Schottky junction.

Funder

Sardar Patel University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D1MA01005K

Reference69 articles.

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3. Spray-Painted Binder-Free SnSe Electrodes for High-Performance Energy-Storage Devices

4. Optical Switching Device Based on a Crystalline SnSe2 Photodetector in Diverse Conditions

5. A Review of Dry Particulate Lubrication: Powder and Granular Materials

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