Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes-Reference-Cited by-同舟云学术

Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes

Published:2018 Issue:18 Volume:8 Page:10057-10063
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Jang Eun-Pyo¹²³⁴,Jo Jung-Ho¹²³⁴,Kim Min-Seok¹²³⁴,Yoon Suk-Young¹²³⁴,Lim Seung-Won¹²³⁴,Kim Jiwan⁵⁶⁷⁴,Yang Heesun¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Hongik University

3. Seoul 04066

4. Republic of Korea

5. Department of Advanced Materials Engineering

6. Kyonggi University

7. Suwon 16227

Abstract

Silica embedding strategy enabling a nearly full PL retention of the original QY of InP QDs is proposed for the realization of a highly efficient, robust QD-LED platform.

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA00119G

Reference34 articles.

1. Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

2. Quantum-Dot Light-Emitting Diodes for Large-Area Displays: Towards the Dawn of Commercialization