In2Si2S3X3 (X = S, Se, Te) Janus monolayers: from magnetic element-free spin-Hall transistor to sustainable energy generation-Reference-Cited by-同舟云学术

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In₂Si₂S₃X₃ (X = S, Se, Te) Janus monolayers: from magnetic element-free spin-Hall transistor to sustainable energy generation

Published:2024 Issue:5 Volume:12 Page:1888-1896
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Mohanta Manish Kumar¹^ORCID,Jena Puru¹^ORCID

Affiliation:

1. Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA

Abstract

In2Si2S3X3 (X = S, Se, Te) Janus monolayers: a multifunctional semiconductors,

Funder

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC03805J

Reference54 articles.

1. Rashba and Dresselhaus Effects in Hybrid Organic–Inorganic Perovskites: From Basics to Devices

2. Direct electronic measurement of the spin Hall effect

3. Spin Hall Effect

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1. MgTe (110) semiconductor for a magnetic-element-free nonballistic spin-field-effect transistor;Physical Review B;2024-02-15

2. Visible-light-driven oxygen evolution by a BaTiO₃ based ferroelectric photocatalyst via water splitting;Journal of Materials Chemistry A;2024

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