Affiliation:
1. Institute for Advanced Materials Technology, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083, China
Abstract
Optimisation of process parameters and introduction of strain to modulate the optoelectronic performance of halide–oxide perovskite heterojunction devices.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Fundamental Research Funds for the Central Universities
China Association for Science and Technology
Chinese Academy of Sciences
Publisher
Royal Society of Chemistry (RSC)