Graphene–Si CMOS oscillators
Author:
Affiliation:
1. L-NESS
2. Department of Physics
3. Politecnico di Milano
4. 22100 Como
5. Italy
6. CNG
7. DTU Nanotech
8. Department of Micro- and Nanotechnology
9. Technical University of Denmark
10. 2800 Lyngby
Abstract
The ambipolarity of graphene is exploited to realize a new class of electronic oscillators by integrating a graphene field-effect transistor with Si CMOS logic.
Funder
H2020 Future and Emerging Technologies
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR07862A
Reference38 articles.
1. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
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5. Energy Band-Gap Engineering of Graphene Nanoribbons
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